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Sell silicon products

Monocrystalline ingots and wafers of electronic quality

Specifications are stipulated with each buyer individually depending on performance data required.

Monocrystalline ingots of solar quality.

No. Parameters Value Unit
1 Method of cultivation on Czochralski
2 Type/Dopand P-type/Boron
3 Diameter (dia) 150 ± 0,5 mm
4 Pseudosquared ingot dimension  (h) 125 x 125 (± 0,5) mm
5 Resistivity 0,5 – 3,0 Ohm*cm
6 Orientation <100> ± 2 degree
7 Life time carrier ≥ 10 msec
8 Oxygen ≤ 1*1018 atom/cm3
9 Carbon ≤ 1*1017 atom/cm3
10 Ingot length 120 – 450 mm
11 Etch Pit Density (EPD) ≤ 5*103 atom/cm-2
12 Angle between any sides of pseudosquared ingot (ά) 90 ± 0,3 degree
13 Squareness and parallesism ≤ 0,5 mm



Monocrystalline wafers of solar quality

Production code W01/1 - 150/200 W02/1 - 150/200 W03/1- 150/200
Parameter Unit Value Value Value
Method of cultivation on Czochralski Czochralski Czochralski
Dopand Boron Boron Boron
Conductivity   Р Р Р
Resistivity ohm·cm 0.5-3 0.5-3 0.5-3
Diameter mm 150 +/- 0.5 150 +/- 0.5 150 +/- 0.5
Orientation (100) +/- 2° (100) +/- 2° (100) +/- 2°
Minority carrier lifetime msec >10 5-10 2 - 5
Dislocation сm-2 <10 <10 <10
Oxygen аt/cm3 <1,0·1018 <1,0·1018 <1,0·1018
Carbon аt/cm3 < 5,0·1017 < 5,0·1017 < 5,0·1017
Length of ignot mm 100-390 100-390 100-390
Diagonal mm 150 +0.5 /- 1 150 +0.5 /- 1 150 +0.5 /- 1
Dimension mm 125,0х125,0 +/-0,5 125,0х125,0 +/-0,5 125,0х125,0 +/-0,5
Symmetry   W,X,Y,Z mm 20,3 - 21.9 20,3 - 21.9 20,3 - 21.9
Centre of squaring in all directions from centre mm ≤ 0,3 ≤ 0,3 ≤ 0,3
Squareness and parallelism mm < 0,5 < 0,5 < 0,5
Edge orientation (010), (001) (010), (001) (010), (001)
Thickness μm 200 +/- 20 200 +/- 20 200 +/- 20
Total thickness variation (TTV) μm < 30 < 30 < 30
Bow μm < 50 < 50 < 50
Wafer surface orientation (100) +/-3° (100) +/-3° (100) +/-3°
Surface saw damage depth μm < 20 < 20 < 20
Saw traces Ra μm < 5 < 5 < 5
Broken wafers Rejected
Quality of edge Only 2 chips per wafers of dimension < 1 mm long by 0.3 mm deep are allowed. No cracks in wafer allowed.